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TEOS or 3MS based films,
including both manual and automatic systems capable of processing up to 300mm
diameter wafers, process development capability and "turn-key" systems
with worldwide installation and process start-up available.
ULTRADEP Advantages
Semiconductor manufacturers
compete on their ability for JIT process development in an ever growing market
demand for larger and more complex integrated circuits at the lowest possible
cost. Their success is directly linked to the ability to defeat traditional
wafer fabrication system obstacles including low product yields resulting from
particulate contamination, ability to make easy process changes, multiple wafer sizes, lack of
wafer to wafer uniformity, initial tool investment, prohibitive
overall equipment effectiveness, varying thruput requirements.
Particulate
Contamination – Particulate generation
is minimized with the incorporation of; a Load Lock Module which eliminates
temperature and pressure cycling in the process chamber, In-situ Post Process
Chamber Clean Cycle which etches the process chamber clean after each film
deposition cycle, localized deposition confining the film to the wafer surface
and no moving parts in the process chamber above the surface of the wafer.
Process
Flexibility – With the incorporation of
the in-situ post process chamber clean cycle, on-going process changes may be
made without worrying about cross-contamination. Doped-undoped-doped processes
may be programmed without any machine preparations or changes.
System process capabilities
include:
| Oxide (SiH4) |
Oxide (TEOS) |
| BPSG (SiH4, B2H6 & PH3) |
BPSG (TEOS, TMP & TMB) |
| PSG (SiH4 & PH3) |
PSG (TEOS & TMP) |
| Silicon Nitride (SiH4) |
Stress Controlled Films |
| Silicon Carbide (Sic) |
Stress Controlled Films |
| Oxynitride
(SiH4) |
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The ease of programming process
gases, chamber pressures and temperatures allows a wide range of film capability
on products not limited to just silicon (ie; gallium arsinide, glass, plastic
etc.).
Wafer
Size Flexibility – The unique design of the UltraDep™ wafer transfer
mechanism allows capability for processing 4", 5", 6" and 8"
wafers on the same basic system. With the use of a simple silicon carbide
fixture (supplied by GSI) random sized products (ie; III-V material, broken
wafers, etc.) may be processed.
Repeatable
Film Uniformity – +/- 1% at 1 sigma across wafer and wafer-to-wafer is
typical (+ 2% guaranteed), optimum step coverage thru in-situ etch capability
yields planerized topography, intrinsic low compressive stress (controlled
stress films available) and growth rates up to 8,000 Angstroms/minute (depending
upon process) are easily attained with the UltraDepÔ system.
PROCESS
GUARANTEES ARE INCLUDED WITH EACH SYSTEM.
Initial
Tool Investment – The UltraDep™ II system initial investment is as
little as 25% the cost of other tools.
Overall
Equipment Effectiveness (OEE) – The design simplicity of the UltraDep™
system offers OEE figures (including Idle Cost/Day) as low as 10% those of other
tools.
Thruput
Requirements – With thruput capabilities up to 20 wafers per hour, the
UltraDep™ II offers maximum flexibility for use as a multi-tool production
system (three UltraDep™ II systems can offer the same wafer thruput as one
multi-chamber system, at 75% the cost), production back-up system (the ease
process programming allows the UltraDep™ II to be multi-tasked) or as an
R&D tool.
Cost
Effectiveness - The low Initial Tool
Investment of the system, as compared to multi-chambered alternatives, allows
cost effective multiple independent systems for high throughput requirements and
small JIT batch sizes with the redundancy to provide continual production
capabilities.
The system has a non-clean
room footprint of 44" wide X 52" deep (excluding the vacuum system
which may be located remotely) and a clean
room footprint of only 44 in2 (44" wide x 1" deep). It
may be configured as a stand-alone system with an integral ULPA filter/blower
system.
The ULTRADEP™ Systems (I
& II) are perfectly suited to manufacturing, systems and process engineers,
university laboratories, wafer processing foundries, manufacturers and
management staff as reliable and easy to use development tools or as a backup
production systems.
UltraDep™ System Advantages
·
Lower
Cost Alternative – Ideally suited for
manufacturers who do not wish (or
cannot afford) to spend $1.9 million (or more)
for the alternative multi-chamber
PECVD systems.
·
R&D Film Development
Applications - Processes developed on the UltraDep™
system are easily
transferred to production tools.
·
Random Shaped Products – The
UltraDep™ system is ideally suited for III-V and
small volume wafer fab
applications. One tool can easily accommodate a variety of
processes and product
shapes.
·
Back-Up Tool to High Volume
Systems - One tool can fill-in for sustaining
capacity needs (or support
production requirements during high volume system
down-time) on any production
process.
·
Interim Increased Capacity -
When temporary increased capacity is required and
the purchase of a high volume
(and expensive) multi-chamber tool is not feasible,
the UltraDep™ II system is
ideal.
·
Wafer
Processing Foundries –
The capability to easily switch processes and
wafer sizes makes the UltraDep™
system ideally suited for this application.
·
University
Applications Laboratories
– The low cost and wide versatility of the
UltraDep™ (I) system fit the
typical university requirements (cost vs. capability).
MODEL SW-3
SINGLE
WAFER, CASSETTE-TO-CASSETTE PECVD SYSTEM

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The SW-3 reactor produces high
quality plasma enhanced CVD films on 4, 5 6 & 8” diameter wafers at
reduced temperatures and is ideally suited for a wide range of deposition
applications ranging from R&D environments to full production capability.
Start-up, operator training and process guarantees are included.
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The SW-3 reaction has a small footprint (<24ft2)
and may be configured as a standalone or
thru-the-wall system. The optional
vacuum pump package may be positioned adjacent to the reactor or located
remotely. The Sw-3 offers
Continuous Processing, and up to four (4) cassettes of wafers may be placed on
the robot eck. Wafer thruputs up to
18 wafers/hour may be achieved.
During operation, the robot
first places a wafer in the loadlock. A
pump down cycle then evacuates the loadlock after which the wafer is transferred
to the process chamber for deposition.
When deposition is complete,
the wafer is returned to the loadlock which is then brought back to atmospheric
pressure. The robot exchanges wafers for continuous single
wafer processing achieving film thickness
uniformities of <2% wafer after wafer.
Controls for pressure, flows,
temperature, robotics RF power, time sequencing and the like are networked to a
HOST computer for operator interface and system management.
User Friendly Interface
A graphical user interface
utilizes a color graphics display and keyboard which enables the user to edit
and download recipes, monitor processes, capture data and control other system
functions.
Contact
Gilbert Technologies for more information about Group Sciences Inc. products.
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