TEOS or 3MS based films, including both manual and automatic systems capable of processing up to 300mm diameter wafers, process development capability and "turn-key" systems with worldwide installation and process start-up available.

ULTRADEP Advantages

Semiconductor manufacturers compete on their ability for JIT process development in an ever growing market demand for larger and more complex integrated circuits at the lowest possible cost. Their success is directly linked to the ability to defeat traditional wafer fabrication system obstacles including low product yields resulting from particulate contamination, ability to make easy process changes, multiple wafer sizes, lack of wafer to wafer uniformity, initial tool investment, prohibitive overall equipment effectiveness, varying thruput requirements.

Particulate Contamination – Particulate generation is minimized with the incorporation of; a Load Lock Module which eliminates temperature and pressure cycling in the process chamber, In-situ Post Process Chamber Clean Cycle which etches the process chamber clean after each film deposition cycle, localized deposition confining the film to the wafer surface and no moving parts in the process chamber above the surface of the wafer.

Process Flexibility – With the incorporation of the in-situ post process chamber clean cycle, on-going process changes may be made without worrying about cross-contamination. Doped-undoped-doped processes may be programmed without any machine preparations or changes.

System process capabilities include:

Oxide (SiH4)    Oxide (TEOS)
BPSG (SiH4, B2H6 & PH3)    BPSG (TEOS, TMP & TMB)
PSG (SiH4 & PH3)    PSG (TEOS & TMP)
Silicon Nitride (SiH4)    Stress Controlled Films
Silicon Carbide (Sic)    Stress Controlled Films
Oxynitride  (SiH4)

The ease of programming process gases, chamber pressures and temperatures allows a wide range of film capability on products not limited to just silicon (ie; gallium arsinide, glass, plastic etc.).

Wafer Size Flexibility – The unique design of the UltraDep™ wafer transfer mechanism allows capability for processing 4", 5", 6" and 8" wafers on the same basic system. With the use of a simple silicon carbide fixture (supplied by GSI) random sized products (ie; III-V material, broken wafers, etc.) may be processed.

Repeatable Film Uniformity – +/- 1% at 1 sigma across wafer and wafer-to-wafer is typical (+ 2% guaranteed), optimum step coverage thru in-situ etch capability yields planerized topography, intrinsic low compressive stress (controlled stress films available) and growth rates up to 8,000 Angstroms/minute (depending upon process) are easily attained with the UltraDepÔ system.

PROCESS GUARANTEES ARE INCLUDED WITH EACH SYSTEM.

Initial Tool Investment – The UltraDep™ II system initial investment is as little as 25% the cost of other tools.

Overall Equipment Effectiveness (OEE) – The design simplicity of the UltraDep™ system offers OEE figures (including Idle Cost/Day) as low as 10% those of other tools.

Thruput Requirements – With thruput capabilities up to 20 wafers per hour, the UltraDep™ II offers maximum flexibility for use as a multi-tool production system (three UltraDep™ II systems can offer the same wafer thruput as one multi-chamber system, at 75% the cost), production back-up system (the ease process programming allows the UltraDep™ II to be multi-tasked) or as an R&D tool.

Cost Effectiveness - The low Initial Tool Investment of the system, as compared to multi-chambered alternatives, allows cost effective multiple independent systems for high throughput requirements and small JIT batch sizes with the redundancy to provide continual production capabilities.

The system has a non-clean room footprint of 44" wide X 52" deep (excluding the vacuum system which may be located remotely) and a clean room footprint of only 44 in2 (44" wide x 1" deep). It may be configured as a stand-alone system with an integral ULPA filter/blower system.

The ULTRADEP™ Systems (I & II) are perfectly suited to manufacturing, systems and process engineers, university laboratories, wafer processing foundries, manufacturers and management staff as reliable and easy to use development tools or as a backup production systems.

UltraDep™ System Advantages

·  Lower Cost Alternative – Ideally suited for manufacturers who do not wish (or 
    cannot afford) to spend $1.9 million (or more) for the alternative multi-chamber 
    PECVD systems.
·  R&D Film Development Applications - Processes developed on the UltraDep™ 
    system are easily transferred to production tools.
·  Random Shaped Products – The UltraDep™ system is ideally suited for III-V and 
    small volume wafer fab applications. One tool can easily accommodate a variety of 
    processes and product shapes.
·  Back-Up Tool to High Volume Systems - One tool can fill-in for sustaining 
    capacity needs (or support production requirements during high volume system 
    down-time) on any production process.
·  Interim Increased Capacity - When temporary increased capacity is required and 
    the purchase of a high volume (and expensive) multi-chamber tool is not feasible, 
    the UltraDep™ II system is ideal.
·  Wafer Processing Foundries – The capability to easily switch processes and 
    wafer sizes makes the UltraDep™ system ideally suited for this application.
·  University Applications Laboratories – The low cost and wide versatility of the 
    UltraDep™ (I) system fit the typical university requirements (cost vs. capability).

MODEL SW-3

SINGLE WAFER, CASSETTE-TO-CASSETTE PECVD SYSTEM


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The SW-3 reactor produces high quality plasma enhanced CVD films on 4, 5 6 & 8” diameter wafers at reduced temperatures and is ideally suited for a wide range of deposition applications ranging from R&D environments to full production capability.  Start-up, operator training and process guarantees are included.  

The SW-3 reaction has a small footprint (<24ft2) and may be configured as a standalone or thru-the-wall system.  The optional vacuum pump package may be positioned adjacent to the reactor or located remotely.  The Sw-3 offers Continuous Processing, and up to four (4) cassettes of wafers may be placed on the robot eck.  Wafer thruputs up to 18 wafers/hour may be achieved.

During operation, the robot first places a wafer in the loadlock.  A pump down cycle then evacuates the loadlock after which the wafer is transferred to the process chamber for deposition.

When deposition is complete, the wafer is returned to the loadlock which is then brought back to atmospheric pressure.  The robot exchanges wafers for continuous single wafer processing achieving film thickness uniformities of <2% wafer after wafer.

Controls for pressure, flows, temperature, robotics RF power, time sequencing and the like are networked to a HOST computer for operator interface and system management.

User Friendly Interface

A graphical user interface utilizes a color graphics display and keyboard which enables the user to edit and download recipes, monitor processes, capture data and control other system functions.

Contact Gilbert Technologies for more information about Group Sciences Inc. products.